The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Apr. 01, 2025
Applicant:

Zhejiang Jinko Solar Co., Ltd., Haining, CN;

Inventors:

Linglin Yu, Haining, CN;

Yuanfang Zhang, Haining, CN;

Zhao Wang, Haining, CN;

Jie Yang, Haining, CN;

Peiting Zheng, Haining, CN;

Xinyu Zhang, Haining, CN;

Assignee:

ZHEJIANG JINKO SOLAR CO., LTD., Haining Zhejiang, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 10/163 (2025.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01);
U.S. Cl.
CPC ...
H10F 10/163 (2025.01); H10F 71/127 (2025.01); H10F 71/134 (2025.01); H10F 77/1243 (2025.01);
Abstract

Provided is a method for manufacturing a solar cell, including: providing a substrate having a first surface and a second surface opposite to each other forming a first doped layer on the second surface and concurrently forming a second doped layer on a target doped dielectric layer; patterning the second doped layer, including removing portions of the second doped layer; etching away the portion of the target doped dielectric layer over the first region; etching away a portion of the target doped semiconductor layer over the first region, and etching away a portion of the second doped layer over the second region; and etching away the portion of the target doped dielectric layer over the second region, a portion of the target doped semiconductor layer over the second region being reserved as a doped semiconductor portion. The respective first regions and the respective second regions are alternatingly distributed.


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