The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jan. 13, 2023
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Jisong Jin, Shanghai, CN;
Zhankui Zhu, Shanghai, CN;
Abstract
Semiconductor structures and methods for forming the same are provided. In one form, a semiconductor structure includes: a substrate; a first dielectric layer, located on the substrate; a trench, located in the first dielectric layer; a conductive layer, located on a bottom and a sidewall of the trench and configured as a resistor structure; and a second dielectric layer, configured to be filled in the trench where the conductive layer is formed. By means of embodiments and implementations of the present disclosure, an equivalent conductive sectional area of the resistor structure is increased, and a transverse area occupied by the resistor structure is reduced, thereby miniaturizing the device.