The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jan. 27, 2023
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventor:

Magali Gregoire, Crolles, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2026.01); H10D 64/01 (2025.01); H10D 84/03 (2025.01); H10P 30/20 (2026.01); H10P 95/90 (2026.01);
U.S. Cl.
CPC ...
H10D 84/013 (2025.01); H10D 64/0112 (2026.01); H10D 84/038 (2025.01); H10P 30/204 (2026.01); H10P 30/208 (2026.01); H10P 95/90 (2026.01);
Abstract

An integrated circuit includes first semiconductor regions each having a silicided portion with group-III, group-IV, and/or group-V atoms implanted therein. In each first semiconductor region, a concentration of the group-III, group-IV, and/or group-V atoms is maximum at an interface between the silicided portion and a non-silicided portion. Other semiconductor regions in the integrated circuit each include a silicided portion also having group-III, group-IV, and/or group-V atoms implanted therein. The silicided portions of the first semiconductor regions are thicker than the silicided portions of the other semiconductor regions. The group-III, group-IV, and/or group-V atoms of the first semiconductor regions and of the other semiconductor regions may be carbon and/or germanium atoms.


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