Semiconductor device, inverter circuit, drive device, vehicle, and elevator

Abstract

A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face parallel to a first direction and a second direction perpendicular to the first direction; a first trench, a second trench, and a third trench extending in the first direction; a first region of n-type disposed in the silicon carbide layer; a second region of p-type disposed in the silicon carbide layer, disposed between the first region of n-type and the first face, and disposed between the first trench and the second trench; a sixth region of p-type disposed in the silicon carbide layer and disposed on a bottom surface of the first trench; a seventh region of p-type disposed in the silicon carbide layer and disposed on a bottom surface of the second trench; an eighth region of p-type disposed in the silicon carbide layer and disposed on a bottom surface of the third trench; a ninth region of p-type disposed in the silicon carbide layer and in contact with the sixth region and the second region; and a tenth region of p-type disposed in the silicon carbide layer and in contact with the seventh region and the second region. At a cross section perpendicular to the first direction and including the ninth region and the tenth region, the first region is in contact with a side surface of the first trench on the third trench side and a side surface of the third trench on the first trench side.