The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Nov. 10, 2023
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventor:

Leonardo Fragapane, Catania, IT;

Assignee:

STMICROELECTRONICS S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 12/01 (2025.01); H10D 30/65 (2025.01); H10D 62/832 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H10D 12/031 (2025.01); H10D 30/655 (2025.01); H10D 62/8325 (2025.01); H10D 64/111 (2025.01);
Abstract

An integrated device includes: a semiconductor structural layer, including silicon carbide and having a first conductivity type; a power device integrated in the structural layer; and an edge termination structure, extending in a ring around the power device and having a second conductivity type. The edge termination structure includes a plurality of ring structures each arranged around the power device and in contiguous pairs. At least a first one of the ring structures comprises a transition region contiguous to a second one of the ring structures. The transition region includes connection regions, having the second conductivity type, connected to the second one of the ring structures and alternating with charge control regions having the first conductivity type.


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