The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Dec. 20, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cezar Bogdan Zota, Rueschlikon, CH;

Eunjung Cha, Adliswill, CH;

Thomas Morf, Gross, CH;

Peter Mueller, Zurich, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01);
Abstract

One or more systems, devices, methods of use and/or methods of fabrication provided herein relate to a high-electron-mobility transistor with a gate electrode below the channel. According to one embodiment, a device comprises a source electrode and a drain electrode coupled to a top surface of a high-electron-mobility transistor (HEMT) heterostructure, and a gate electrode located in contact with an underside of the HEMT heterostructure.


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Zota, Cezar. (2026). High electron mobility transistor with gate electrode below the channel (U.S. Patent No. 12707667). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707667

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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