The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Aug. 21, 2023
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Ryota Kuroda, Tokyo, JP;
Hitoshi Matsuura, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 12/01 (2025.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 12/038 (2025.01); H10D 62/127 (2025.01); H10D 62/393 (2025.01); H10D 64/117 (2025.01);
Abstract
A semiconductor device includes a trench formed in an element formation region of a semiconductor substrate, an insulating film formed on an inner wall of the trench, a p-type semiconductor portion embedded in a part of the trench via the insulating film, and an n-type semiconductor portion embedded in another part of the trench via the insulating film and provided so as to contact with the p-type semiconductor portion.
Kuroda, Ryota. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12707663). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707663
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile