The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Sep. 25, 2023
Byd Company Limited, Shenzhen, CN;
Guangming Yang, Shenzhen, CN;
Axi Qi, Shenzhen, CN;
Xingchun Zhang, Shenzhen, CN;
Yilong Yu, Shenzhen, CN;
Fengchuan Yu, Shenzhen, CN;
BYD Company Limited, Shenzhen, CN;
Abstract
An insulated gate bipolar transistor (IGBT) assembly includes a wafer; a first heat dissipation plate and a second heat dissipation plate being disposed on two surfaces of the wafer in a thickness direction of the wafer respectively, a plurality of first heat dissipation pins being disposed at an interval from each other on a surface of the first heat dissipation plate facing away from the second heat dissipation plate, and a plurality of second heat dissipation pins being disposed at an interval from each other on a surface of the second heat dissipation plate facing away from the first heat dissipation plate; and an insulating waterproof housing covering a portion of the wafer exposed from the first heat dissipation plate and the second heat dissipation plate.