The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Sep. 01, 2023
Hunan San'an Semiconductor Co., Ltd., Changsha, CN;
Zhigao Peng, Changsha, CN;
Yonghong Tao, Changsha, CN;
HUNAN SAN'AN SEMICONDUCTOR CO., LTD., Changsha, CN;
Abstract
A semiconductor structure includes a substrate, a semiconductor epitaxial layer, an active region and a terminal region, a field oxide layer, an anode layer, and a passivation layer. The anode layer is configured to extend from the active region to be arranged on a portion of the field oxide layer. The side wall and the top wall of the anode layer are connected to each other through a curved connection surface. By setting the upper corner of the side wall of the anode layer to be curved, the transition between the side wall and the top wall of the anode layer is smooth, preventing a sharp change in the inclination angle and preventing the stress concentration of the passivation layer at the corner of the side wall.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile