The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Mar. 30, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Bongyong Lee, Suwon-si, KR;
Yongseok Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A 3D FeRAM device includes a capacitor structure including a first capacitor electrode on a substrate, the first capacitor electrode extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a ferroelectric pattern surrounding a sidewall of the first capacitor electrode, and second capacitor electrodes surrounding and contacting an outer sidewall of the ferroelectric pattern, the second capacitor electrodes being spaced apart from each other in the vertical direction, an access transistor including a channel layer on the first capacitor electrode, a gate insulation layer surrounding an outer sidewall of the channel layer, and a gate electrode surrounding an outer sidewall of the gate insulation layer, a conductive pad on the channel layer, a contact plug on the conductive pad, and a bit line on the contact plug.