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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12707640 B1

PDFFull Text
Date of Patent:
Aug. 11, 2026

Filed:

Feb. 28, 2023

Semiconductor memory device and method for manufacturing semiconductor memory device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Hideto Takekida, Nagoya Aichi, JP;

Hisashi Harada, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Christopher A Johnson

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10W 20/435 (2026.01);
Abstract

A semiconductor memory device includes a stacked body, a first metal layer, and a first columnar body. The stacked body includes a plurality of gate electrode layers and a plurality of insulating layers. The plurality of gate electrode layers include a first gate electrode layer, and a second gate electrode layer having a length in a second direction intersecting a first direction that is shorter than that of the first gate electrode layer. The first metal layer is disposed at least on a first side with respect to a terrace portion of the first gate electrode layer. The first columnar body is disposed on the first side with respect to the terrace portion of the first gate electrode layer. The first columnar body includes a conductive portion extending in the first direction and penetrating the first metal layer to be connected to the terrace portion of the first gate electrode layer, and an insulator disposed at least between the first metal layer and the conductive portion.

Find Patent Forward Citations

Takekida, Hideto. (2026). Semiconductor memory device and method for manufacturing semiconductor memory device (U.S. Patent No. 12707640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12707640

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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