The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Dec. 21, 2023
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Nam Jae Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 80/00 (2023.01); H10W 90/00 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 80/00 (2023.02); H10W 90/00 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/792 (2026.01);
Abstract
A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a gate stack, a pass gate overlapping a contact region of the gate stack and opening a cell array region of the gate stack, a doped semiconductor layer spaced apart from the pass gate and overlapping the cell array region of the gate stack, and an active pillar passing through the pass gate.