The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Aug. 05, 2021
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Motomu Kurata, Isehara, JP;
Tsutomu Murakawa, Isehara, JP;
Ryo Arasawa, Isehara, JP;
Kunihiro Fukushima, Isehara, JP;
Yasumasa Yamane, Atsugi, JP;
Shinya Sasagawa, Chigasaki, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semiconductor device, a step of embedding a first conductor in the opening, a step of forming a second conductor in contact with a top surface of the first conductor, a step of forming a first barrier insulating film by a sputtering method to cover the structure body, the first conductor, and the second conductor, and a step of forming a second barrier insulating film over the first barrier insulating film by an ALD method are included. The first barrier insulating film and the second barrier insulating film each have a function of inhibiting hydrogen diffusion.