The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Nov. 02, 2022
Infineon Technologies Ag, Neubiberg, DE;
Timothy Canning, Regensburg, DE;
Helmut Brech, Lappersdorf, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
In accordance with an embodiment, an RF amplifier includes: a first amplifier including a first transistor coupled to a first supply node configured to provide a first supply voltage, the first transistor having a first device periphery; a second amplifier including a second transistor coupled to a second supply node configured to provide a second supply voltage higher than the first supply voltage, the second transistor having a second device periphery; and a combining network coupled to an output of the first amplifier, an output of the second amplifier, and an RF output port. The first device periphery, the first supply voltage, the second device periphery, and the second supply voltage are configured to maintain a junction temperature ratio of between 0.3 and 1.0, and the junction temperature ratio is a ratio of a temperature of the first amplifier to a temperature of the second amplifier.