The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Mar. 04, 2022
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Soichiro Eto, Tokyo, JP;

Shigeru Nakamoto, Tokyo, JP;

Kosuke Fukuchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H10P 50/24 (2026.01); H10P 74/00 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32963 (2013.01); H01J 37/32926 (2013.01); H01J 37/32972 (2013.01); H10P 50/242 (2026.01); H10P 74/238 (2026.01); H01J 2237/3346 (2013.01);
Abstract

A plasma processing method apparatus for accurately estimating the amount of lateral etching and determining an end point based on the estimated amount of etching, including: a first step of irradiating the wafer with light; a second step of receiving light reflected from the wafer at a plurality of predetermined times during the plasma process on the wafer; a third step of performing signal processing on light amount data on each of a plurality of wavelengths of the light thus received; a fourth step of determining the amount of etching in the wafer during the plasma process by use of processed data subjected to the signal processing; and a fifth step of determining an end point of the plasma process based on the amount of etching.


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