The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Mar. 08, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jongho An, Suwon-si, KR;

Daehan Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/32 (2013.01); G11C 16/3418 (2013.01);
Abstract

A memory device includes a leakage detector connected to each of a plurality of word lines and configured to obtain a program voltage and perform a leakage detection operation, and a control circuit configured to control a row decoder, a voltage generator, and the leakage detector, and to perform a leakage detection operation on the plurality of word lines. The control circuit may execute a loop including a first section and a second section, may control the program voltage not to be applied to the designated word line after a time in the first section, may use the leakage detector in response to execution of at least one designated loop to measure a voltage charged in the designated word line after the second section of the designated loop is terminated, and may perform the leakage detection operation on the basis of the measured voltage.


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