The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Sep. 24, 2024
Sandisk Technologies, Inc., Milpitas, CA (US);
Qinghua Zhao, San Carlos, CA (US);
Mohan Vamsi Dunga, Santa Clara, CA (US);
Gwang Yeong Stanley Jeong, Dublin, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Technology for operating word line switch (WLSW) transistors that are configured to provide voltages to word lines in non-volatile storage such as NAND. Each WLSW transistor has a source terminal that may be connected to a word line in order to provide an operating voltage to that word line. In an aspect, voltages are applied to a WLSW transistor to charge an unselected word line in an unselected block to a pre-charge voltage during a program operation of a selected word line in a selected block. This pre-charge voltage may remain on the source terminal of the WLSW transistor that is connected to the unselected word line while a neighboring WLSW transistor provides a program voltage to the selected word line in the selected block. Therefore, the voltage difference between the source terminals of the neighboring WLSW transistors is reduced, which reduces leakage current between these two WLSW transistors.