The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
May. 03, 2024
Sandisk Technologies, Inc., Milpitas, CA (US);
Jaco Hofmann, Santa Clara, CA (US);
Dejan Vucinic, San Jose, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Technology for in-memory computing. NAND memory cells are organized into calculation cell units based on one or more physical and/or operational characteristics of the NAND memory cells. Variances in physical and/or operational characteristics of the NAND memory cells in a calculation cell unit can negatively impact accuracy of the in-memory compute. NAND memory cell transistors that are similar to each other in the one or more physical and/or operational characteristics are placed into a calculation cell unit even if those memory cells are not adjacent to each other. Two memory cell transistors of one calculation cell unit may be separated by at least one memory cell transistor of a different calculation cell unit. Organizing NAND memory cell transistors into calculation cell units based on one or more physical and/or operational characteristics improves accuracy of NAND in-memory compute.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile