The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Dec. 05, 2022
Applicant:

Beijing Superstring Academy of Memory Technology, Beijing, CN;

Inventors:

Zhengyong Zhu, Beijing, CN;

Bokmoon Kang, Beijing, CN;

Dan Wang, Beijing, CN;

Chao Zhao, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/4096 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

Provided is a memory. The memory includes at least one memory array and at least one control circuit, wherein the memory array comprises a plurality of memory cells arranged in an array as well as read wordlines and read bitlines for read operations, wherein each of the memory cells comprises a first transistor and a second transistor. The control circuit is configured to transmit, during a pre-processing stage, a first voltage to the read wordline and the read bitline; transmit, during a pre-charging stage, a second voltage to the read bitline; and transmit, during a read-sensing stage, a third voltage to the read wordline.


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