The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jan. 03, 2024
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Seohee Kim, San Diego, CA (US);

Chulmin Jung, San Diego, CA (US);

Dimple Vijay Kochar, Cambridge, MA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 7/50 (2006.01); G06F 7/523 (2006.01); G11C 7/10 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1006 (2013.01); G06F 7/50 (2013.01); G06F 7/523 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01);
Abstract

A compute-in-memory system is provided in which a plurality of compute-in-memory bitcells couple to a read bit line. Depending upon sequential binary multiplications in the compute-in-memory bitcells, a current from the read bit line sequentially increases. A transition detection circuit detects and counts the current transitions to provide a multiply-and-accumulate result from the sequential binary multiplications.


Find Patent Forward Citations

Kim, Seohee. (2026). Compute-in-memory with current transition detection (U.S. Patent No. 12706128). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12706128

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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