Method for manufacturing a composite structure comprising a thin film of monocrystalline sic on a carrier substrate of polycrystalline sic

Abstract

A method of fabricating a composite structure includes providing a c-SiC initial substrate, depositing a relatively thin p-SiC first layer on a front side of the initial substrate at a relatively high temperature, the first layer having a dopant concentration greater than 10/cm, forming a buried brittle plane in the initial substrate delineating a thin layer of single crystal SiC between the brittle plane and a front side of the initial substrate, depositing a relatively thick amorphous and/or polycrystalline SiC second layer on the first layer at a relatively low temperature, the second layer including dopants of the same type as those of the first layer, at a concentration greater than 10/cm, and depositing a p-SiC third layer on the second layer at a relatively high temperature. A separation along the buried brittle plane takes place during the deposition process.