The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jan. 13, 2025
Applicant:

Japan Display Inc., Tokyo, JP;

Inventor:

Masanobu Ikeda, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/58 (2006.01); C03C 17/22 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); H10P 14/20 (2026.01); H10P 14/22 (2026.01);
U.S. Cl.
CPC ...
C23C 14/5873 (2013.01); C03C 17/225 (2013.01); C23C 14/0617 (2013.01); C23C 14/3407 (2013.01); C23C 14/50 (2013.01); C23C 14/541 (2013.01); H01J 37/32449 (2013.01); H01J 37/3426 (2013.01); H01J 37/3464 (2013.01); H01J 37/3476 (2013.01); H10P 14/22 (2026.01); H10P 14/2922 (2026.01); H10P 14/3416 (2026.01); C03C 2217/281 (2013.01); C03C 2218/154 (2013.01); C03C 2218/33 (2013.01); H01J 2237/332 (2013.01);
Abstract

A film formation apparatus includes a vacuum chamber, a substrate support portion for supporting a substrate, a target support portion for supporting a target containing nitrogen and gallium, a sputtering gas supply unit for supplying a sputtering gas, a sputtering power source for applying a voltage to the target, a first radical supply source for supplying nitrogen radicals and hydrogen radicals, and a control unit. The control unit controls the sputtering gas supply unit, the sputtering power source, and the first radical supply source so that a first period in which the sputtering gas, the nitrogen radicals, and the hydrogen radicals are supplied to the vacuum chamber and a voltage is applied to the target and a second period in which the nitrogen radicals and the hydrogen radicals are not supplied to the vacuum chamber and a voltage is applied to the target are repeated.


Find Patent Forward Citations

Quick Actions:

Ikeda, Masanobu. (2026). Film formation apparatus and film formation method of gallium nitride film (U.S. Patent No. 12703910). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12703910

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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