The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2026

Filed:

Jan. 10, 2024
Applicant:

Omnitron Sensors Inc., Los Angeles, CA (US);

Inventor:

Trent Huang, Los Angeles, CA (US);

Assignee:

OMNITRON SENSORS INC., Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); G02B 26/08 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00301 (2013.01); B81B 3/0054 (2013.01); G02B 26/0833 (2013.01); B81B 2201/042 (2013.01); B81C 2201/0133 (2013.01);
Abstract

A system and method for fabricating a micro-electromechanical system (MEMS) device is disclosed. A device layer, a handle layer and a buried oxide layer between the handle layer and the device wafer are formed. A top trench is created in a top surface of the device layer. An oxide layer is created over the top surface of the device layer and the top trench. The top of the device layer and the top trench is coated with a polysilicon layer. The oxide layer of the top trench or the top of the device layer is selectively etched away to create a structure. A bottom trench is created through the handle layer under the structure.


Find Patent Forward Citations

Huang, Trent. (2026). Methods for fabrication of mems device (U.S. Patent No. 12703624). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12703624

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…