The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jun. 25, 2020
Aledia, Echirolles, FR;
Commissariat À I'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Marion Gruart, Saint-Egreve, FR;
Bruno-Jules Daudin, Grenoble Cedex, FR;
Walf Chikhaoui, Voiron, FR;
Aledia, Champagnier, FR;
Commissariat àl'Énergie Atomique et aux Énergies Alternatives, Paris, FR;
Universite Grenoble Aples, Saint Martin d'Heres, FR;
Abstract
A method of manufacturing an optoelectronic device including light-emitting diodes comprising forming three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, with a polarity of the group-III element, the method further including, for each semiconductor element, forming an active area covering the semiconductor element and a stack of semiconductor layers covering the active area, the active area being formed by vapor deposition at low pressure and comprising quantum wells separated by barrier layers, each quantum well including a ternary alloy having at least one first group-III element, the group-V element, and a second group-III element, the ratio of the atomic flux of the group-III elements to the atomic flux of the group-V element is in the range from 1 to 1.8.