The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Dec. 09, 2022
Applicant:
Lx Semicon Co., Ltd., Daejeon, KR;
Inventors:
Deog Soo Kim, Daejeon, KR;
Tae Ryong Kim, Daejeon, KR;
Assignee:
LX SEMICON CO., LTD, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 40/25 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01); H10W 99/00 (2026.01); H02P 27/06 (2006.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01);
U.S. Cl.
CPC ...
H10W 40/255 (2026.01); H10W 74/016 (2026.01); H10W 74/114 (2026.01); H10W 90/00 (2026.01); H10W 99/00 (2026.01); H02P 27/06 (2013.01); H10W 72/01235 (2026.01); H10W 72/072 (2026.01); H10W 72/223 (2026.01); H10W 72/255 (2026.01); H10W 90/724 (2026.01);
Abstract
The present disclosure relates to a technology relating to a power semiconductor module of which heat is dissipated through both sides thereof and provides a technology for maintaining a distance between an upper substrate and a lower substrate by a metal bump formed on one side of a power semiconductor die.