The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jun. 21, 2023
Akash Systems, Inc., San Francisco, CA (US);
Daniel Francis, San Francisco, CA (US);
Frank Lowe, San Francisco, CA (US);
Kyle Graham, San Francisco, CA (US);
Felix Ejeckam, San Francisco, CA (US);
Tyrone D. Mitchell, Jr., San Francisco, CA (US);
Paul Saunier, San Francisco, CA (US);
Akash Systems, Inc., San Francisco, CA (US);
Abstract
Aspects of diamond growth on semiconductors are described. Some aspects include deposition of a layer of diamond seeds on a semiconductor-containing layered structure. Some aspects include the deposition of an intermediate layer over the layer of diamond seeds. In some aspects, the intermediate layer is an immobilizing layer to immobilize the diamond seeds. Some aspects include generating synthetic diamond over a surface of a semiconductor-containing layered structure. In some aspects, synthetic diamond is generated over a surface comprising diamond seeds and an intermediate layer. In some aspects, semiconductor-containing layered structure is etched with diamond seeds in place over a surface of the semiconductor-containing layered structure. In some aspects, an interface of a substrate comprises an interface between a layer of diamond seeds and a semiconductor-containing layered structure, an interface between an intermediate layer and the layer of diamond seeds, and an interface between synthetic diamond and the intermediate layer.