The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Feb. 28, 2022
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Byron Lovell Williams, Plano, TX (US);

Elizabeth Costner Stewart, Dallas, TX (US);

Jeffrey Alan West, Dallas, TX (US);

Thomas Dyer Bonifield, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/43 (2026.01); H10D 88/00 (2025.01); H10W 20/47 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/496 (2026.01); H10W 20/081 (2026.01); H10W 20/423 (2026.01); H10W 20/43 (2026.01); H10D 88/00 (2025.01); H10W 20/063 (2026.01); H10W 20/47 (2026.01); H10W 72/90 (2026.01); H10W 72/941 (2026.01); H10W 90/753 (2026.01); H10W 90/756 (2026.01); H10W 90/811 (2026.01);
Abstract

An electronic device has a conductive shield between first and second regions in a multilevel metallization structure, as well as a capacitor with first and second terminals in the first region, the first terminal laterally overlaps the second terminal by an overlap distance of 1.0 μm to 6.0 μm, the conductive shield includes a first metal line that encircles the first terminal, and the first metal line is spaced apart from the first terminal by a gap distance of 0.5 μm to 1.0 μm.


Find Patent Forward Citations

Loading…