The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Mar. 04, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10W 20/44 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10W 20/4441 (2026.01);
Abstract
A semiconductor device includes a substrate and an insulating film formed on the substrate, and an electrode layer comprising molybdenum, formed in contact with the insulating film. The electrode layer has a chlorine concentration gradient such that a first concentration of chlorine in a first portion of the electrode layer closer to the insulating layer is higher than a second concentration of chlorine in a second portion of the electrode layer less closer to the insulating layer.