The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Jan. 05, 2024
Applicant:

Mediatek Singapore Pte. Ltd., Singapore, SG;

Inventors:

Lian Duan, Singapore, SG;

Zhigang Duan, Singapore, SG;

Chang Liang, Singapore, SG;

Jubao Zhang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 74/00 (2026.01);
U.S. Cl.
CPC ...
H10P 74/277 (2026.01); H10P 74/273 (2026.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a semiconductor wafer, a test structure, and a photoresist pattern. The semiconductor wafer has a substrate with die areas separated by a scribe line area. The test structure disposed in the scribe line area includes first and second transistor test units. The photoresist pattern is arranged between the first and second transistor test units. The first gate structures of the first and second transistor test units are electrically connected to each other. The second gate structures of the first and second transistor test units are electrically connected to each other. A first drain region of the first transistor test unit is electrically connected to a first source region of the second transistor test unit. A second drain region of the first transistor test unit is electrically connected to a second source region of the second transistor test unit.


Find Patent Forward Citations

Loading…