The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Sep. 20, 2023
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Sébastien Kerdiles, Grenoble Cedex, FR;

Pablo Acosta Alba, Grenoble Cedex, FR;

Angela Alvarez Alonso, Grenoble Cedex, FR;

Mathieu Opprecht, Grenoble Cedex, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3816 (2026.01); H10P 14/3806 (2026.01);
Abstract

A method for crystallising an amorphous layer included in a stack, extending directly in contact with a crystalline layer of the stack by forming an interface with the crystalline layer, and having a first face opposite the interface, and having a melting threshold Ecorresponding to the energy density to be provided to the amorphous layer to achieve its melting, for a thickness Ep of the amorphous layer defined between the first face and the interface, the method including a crystallisation annealing of the amorphous layer by subjecting it, by zones, to laser pulses, and in each zone, the laser pulses are emitted by series, each laser pulse having an energy density EDdifferent from one series to another so as to maintain the energy density of the pulses of each series below the melting threshold.


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