The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Apr. 26, 2023
Applicant:
Asm Ip Holding, B.v., Almere, NL;
Inventors:
Brendan Timothy Padraig Marozas, Leuven, BE;
Rami Khazaka, Leuven, BE;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 14/24 (2026.01); H10P 14/20 (2026.01); H10P 50/24 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3444 (2026.01); H10P 14/24 (2026.01); H10P 14/27 (2026.01); H10P 14/2905 (2026.01); H10P 14/2926 (2026.01); H10P 50/242 (2026.01);
Abstract
Methods and systems for selectively forming phosphorus-doped epitaxial material. The methods can be used to selectively form the phosphorus-doped epitaxial material within a gap from the bottom upward. Exemplary methods can be used to, for example, form source and/or drain regions in field effect transistor devices, such as in gate-all-around field effect transistor devices.