The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Dec. 19, 2022
Applicant:

Northwestern University, Evanston, IL (US);

Inventor:

Pedram Khalili Amiri, Wilmette, IL (US);

Assignee:

Northwestern University, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02);
Abstract

A voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device includes a bottom electrode, a bottom CoFeB fixed layer disposed above and in electrical communication with the bottom electrode, a MgO layer disposed above the bottom CoFeB fixed layer, a top CoFeB free layer disposed above the MgO layer, a Mo capping layer disposed above the top CoFeB free layer, and a top electrode disposed above and in electrical communication with the Mo capping layer. A magnetization state of the top CoFeB free layer is switchable between an original state and an opposite state by applying a switching voltage across the MTJ device for a switching duration corresponding to a half period of a magnetic moment precession of the top CoFeB free layer.


Find Patent Forward Citations

Loading…