The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Jan. 22, 2021
Applicant:

Poro Technologies Ltd, Cambridge, GB;

Inventors:

Muhammad Ali, Cambridge, GB;

Yingjun Liu, Cambridge, GB;

Tongtong Zhu, Cambridge, GB;

Assignee:

PORO TECHNOLOGIES LTD, Cambridge, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/814 (2025.01); H10H 20/816 (2025.01); H10H 20/817 (2025.01); H10H 20/825 (2025.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 20/817 (2025.01); H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/814 (2025.01); H10H 20/8162 (2025.01); H10H 20/825 (2025.01); H10H 29/14 (2025.01);
Abstract

A method of manufacturing a micro-LED comprises the steps of forming an n-doped connecting layer of III-nitride material over a porous region of III-nitride material, and forming an electrically-insulating mask layer on the n-doped connecting layer. The method comprises the steps of removing a portion of the mask to expose an exposed region of the n-doped connecting layer, and forming an LED structure on the exposed region of the n-doped connecting layer. A method of manufacturing an array of micro-LEDs comprises the step of removing a portion of the mask to expose an array of exposed regions of the n-doped connecting layer, and forming an LED structure on each exposed region of the n-doped connecting layer. A micro-LED and array of micro-LEDs are also provided.


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