The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Mar. 16, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Toru Shirakata, Kanagawa, JP;

Hikaru Iwata, Kanagawa, JP;

Masanari Yamaguchi, Kanagawa, JP;

Kazunobu Ota, Kanagawa, JP;

Atsuhiro Ando, Kanagawa, JP;

Daiki Sakai, Kanagawa, JP;

Akira Maehara, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/811 (2025.01); H10F 39/189 (2025.01);
Abstract

A first light-receiving device of an embodiment of the disclosure includes: a first semiconductor substrate having first and second surfaces opposed to each other, receiving application of a first potential, and including light-receiving elements arranged two-dimensionally in matrix; a second semiconductor substrate having third and fourth surfaces opposed to each other, with the first surface and the third surface being disposed to be opposed to each other, receiving application of a second potential lower than the first potential, and including a logic circuit that processes a light-receiving signal based on electric charge outputted from the plurality of light-receiving elements; and an interlayer insulating layer provided between the first and second semiconductor substrates, in which the second semiconductor substrate has a side surface recessed more inward than a side surface of the first semiconductor substrate, and the side surface of the second semiconductor substrate is coated with a protective film.


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