The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Apr. 11, 2024
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
This application discloses a unit structure of a silicon photomultiplier tube, including a first conductive type heavily doped first electrode region located on a first side of the shallow trench isolation, a second conductive type heavily doped second electrode region located on a second side, and a quenching resistor located on a top surface of the shallow trench isolation. A photosensitive layer is formed in the silicon substrate at bottoms of the first electrode region, the shallow trench isolation and the second electrode region. The first electrode region, the photosensitive layer and the second electrode region form a Geiger mode avalanche photodiode. A first end of the quenching resistor is connected to the first electrode region through a first metal interconnect structure. A second end of the quenching resistor is connected to a first electrode. The second electrode region is connected to a second electrode.