The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Aug. 05, 2023
International Business Machines Corporation, Armonk, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Takashi Ando, Eastchester, NY (US);
James P. Mazza, Saratoga Springs, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
David Wolpert, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a substrate and a transistor positioned on the substrate. The transistor includes transistor includes a channel region, a shared gate region, and a source and drain region. The source and drain region includes a concave outer wall includes a concave outer wall. A method of manufacturing a semiconductor device includes providing a substrate and forming a plurality of transistor gate structures on the substrate. A source and drain region are formed and positioned adjacent the plurality of transistor gate structures. A concave wall is recessed into material of the source and drain region toward a centerline of the source and drain region.