The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Sep. 19, 2023
Applicant:
GE Aviation Systems Llc, Grand Rapids, MI (US);
Inventors:
Collin William Hitchcock, Clifton Park, NY (US);
Biju Jacob, Niskayuna, NY (US);
Assignee:
GE Aviation Systems LLC, Grand Rapids, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/64 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/64 (2025.01); H10D 30/028 (2025.01); H10D 62/105 (2025.01);
Abstract
A radiation hardened semiconductor device including a heavily doped substrate of a semiconductor device, a drift layer having a substantially uniform doping concentration and a thickness is provided. The doping concentration and the thickness of the drift layer are such that when the semiconductor device is operating at a maximum voltage rating, an electrical field profile in the drift layer extends less than 80% of the thickness of the drift layer, providing the radiation hardened nature of the device.