The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Dec. 21, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Manoj Mehrotra, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/65 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6217 (2025.01); H10D 30/65 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01);
Abstract
In a described example, an integrated circuit includes a substrate of a semiconductor material, a source region, a gate region, a drain region and a fin structure formed on the substrate. The fin structure includes the gate region, the source region and a drift region between the gate region and the drain region. A doped control layer is formed along at least one sidewall of the fin structure over the drift region.