The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Sep. 29, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jin Young Choi, Suwon-si, KR;
Woo Sung Park, Suwon-si, KR;
Min Seok Jo, Suwon-si, KR;
Ji Won Park, Suwon-si, KR;
Han Young Song, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a back interlayer insulating film, a back wiring line in the back interlayer insulating film, a fin-shaped pattern on a first surface of the back wiring line, a field insulating film disposed on the fin-shaped pattern, a source/drain pattern on the fin-shaped pattern, a source/drain contact disposed on the source/drain pattern and connected to the source/drain pattern and a contact connecting via connecting the back wiring line and the source/drain contact, and is in contact with the back wiring line. The contact connecting via includes a first surface connected to the source/drain contact, and a second surface contacted to the back wiring line. A height from a second surface of the back wiring line to an upper surface of the field insulating film is smaller than a height from the second surface of the back wiring line to the first surface of the contact connecting via.