Semiconductor structure and method for forming same

Abstract

A semiconductor structure and a method for forming same are provided. The forming method includes: forming a second electrode layer on a first dielectric layer, where the second electrode layer covers the first dielectric layer in a first region; forming a second dielectric layer on a second electrode layer and in a second region; forming a third electrode layer on the second dielectric layer, where on a projection plane parallel to the base, the third electrode layer has an overlapping region with each of the first region and the second region; and forming a first electrically connecting structure in contact with the second electrode layer, and forming, in the second region, a second electrically connecting structure in contact with the third electrode layer and the first electrode layer; or forming a third electrically connecting structure in contact with the first electrode layer, and forming a fourth electrically connecting structure in contact with the second electrode layer and the third electrode layer. By adjusting a connection relationship between different electrode layers, different equivalent capacitance densities can be obtained, thereby satisfying demands of different types of capacitors.