The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Sep. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yongjae Lee, Seongnam-si, KR;

Kyungsoo Kim, Hwaseong-si, KR;

Jinyoung Park, Suwon-si, KR;

Kyen-Hee Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02);
Abstract

A semiconductor memory device is disclosed. The semiconductor memory device may include a magnetic tunnel junction pattern, a spin-orbit torque (SOT) pattern in contact with a first portion of the magnetic tunnel junction pattern, a first transistor electrically connected to a second portion of the magnetic tunnel junction pattern and configured to be controlled by a first word line, and a second transistor electrically connected to a first end of the spin-orbit torque pattern and configured to be controlled by a second word line. An effective channel width of the first transistor may be different from an effective channel width of the second transistor.


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