The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Apr. 06, 2022
Applicant:
Sunrise Memory Corporation, San Jose, CA (US);
Inventors:
Vinod Purayath, Sedona, AZ (US);
Wu-Yi Henry Chien, San Jose, CA (US);
Eli Harari, Saratoga, CA (US);
Assignee:
SUNRISE MEMORY CORPORATION, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
H10B 43/20 (2023.02);
Abstract
Carbon has many advantageous uses as a sacrificial material in the fabricating thin-film storage transistors, such as those organized as NOR memory strings. In one implementation, the carbon layers are replaced by heavily doped n-type polysilicon source and drain regions at a late step during device fabrication. As a result, many high temperature steps within the fabrication process may now be carried out without concern for thermal diffusion from the heavily doped polysilicon, thus allowing phosphorus to be used as the n-type dopant.