The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jul. 07, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kyooho Jung, Seoul, KR;
Wonsik Choi, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H10W 44/00 (2026.01);
U.S. Cl.
CPC ...
H10B 12/03 (2023.02); H10B 12/033 (2023.02); H10B 12/30 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10D 1/042 (2025.01); H10D 1/68 (2025.01); H10D 1/696 (2025.01); H10D 1/716 (2025.01); H10W 44/601 (2026.01);
Abstract
A method of manufacturing an integrated circuit device includes forming a plurality of lower electrodes above a substrate, forming a dielectric film on the plurality of lower electrodes, forming a doped upper interface film on the dielectric film, and forming an upper electrode on the doped upper interface film, wherein the doped upper interface film includes a dopant, and the dopant includes one selected from tin (Sn), molybdenum (Mo), niobium (Nb), tantalum (Ta), and aluminum (Al).