The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Oct. 05, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyeoncheol Jo, Suwon-si, KR;

Inah Moon, Suwon-si, KR;

Dongsoo Kim, Suwon-si, KR;

Jaehyoung Park, Suwon-si, KR;

Shuichi Shimokawa, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/57 (2023.01); H04N 23/51 (2023.01); H04N 23/60 (2023.01); H04N 25/40 (2023.01); H04N 25/615 (2023.01); H04N 25/706 (2023.01); H04N 25/772 (2023.01);
U.S. Cl.
CPC ...
H04N 25/57 (2023.01); H04N 23/51 (2023.01); H04N 23/665 (2023.01); H04N 25/40 (2023.01); H04N 25/615 (2023.01); H04N 25/706 (2023.01); H04N 25/772 (2023.01);
Abstract

An electronic device may include an image sensor, a processor, and a memory. The image sensor may include at least one photo diode, a transfer gate connecting the at least one photo diode to a first node (FD1 node), a first capacitor connected to the first node and having first capacitance, a dynamic range gate (DRG) connected between the first node and a second node (FD2 node), a second capacitor connected to the second node and having second capacitance, and a micro controller unit. Other various embodiments identified through the specification are possible.


Find Patent Forward Citations

Loading…