Microelectronic device package with integral waveguide transition

Abstract

An example device includes: a multilayer build-up package substrate including trace conductor layers spaced from one another by dielectric material, and further including connection conductor layers coupling portions of the trace conductor layers through dielectric material, the multilayer build-up package substrate having a device side surface with one of the trace conductor layers and an opposing board side surface with one of the connection conductor layers; and a waveguide transition formed from the multilayer build-up package substrate, the waveguide transition having an input port formed from the connection conductor layer on the board side surface, and having at least two sub-transitions spaced laterally from one another, the at least two sub-transitions to couple a signal from the input port through the trace conductor layers and the connection conductor layers to a coplanar waveguide formed from the trace conductor layer on the device side surface.