The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Feb. 15, 2023
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Ranadeep Bhowmick, San Jose, CA (US);

John Holland, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01);
Abstract

A method for reducing reflected power associated with a high frequency (HF) radio frequency (RF) generator after a transition state is described. The method includes controlling the HF RF generator to divide a state of an HF RF signal into a plurality of sub-states. The plurality of sub-states include a first sub-state and a second sub-state. The method further includes controlling the HF RF generator to apply a first reference high frequency value during the first sub-state and a second reference high frequency value during the second sub-state. The method includes applying a first set of HF offset values from the first reference high frequency value during the first sub-state and applying a second set of HF offset values from the second reference high frequency value during the second sub-state.


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