The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Sep. 10, 2024
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Mina Hatakeyama, Yokohama Kanagawa, JP;

Yuki Inuzuka, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 5/06 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 5/063 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3436 (2013.01);
Abstract

A semiconductor memory device capable of reducing the number of executions of sensing is provided. The semiconductor memory device includes memory cells, word lines that are connected to the memory cells, bit lines that are connectable to the memory cells, and sense amplifiers connectable to the bit lines. A writing operation on the memory cell includes a program operation and a verifying operation. In the verifying operation, the sense amplifier executes a first sensing operation against a first voltage level and executes, based on a result of the first sensing operation, either a second sensing operation against a second voltage level that is higher than the first voltage level or a third sensing operation against a third voltage level that is lower than the first voltage level.


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