The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Nov. 10, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jungmin Park, Suwon-si, KR;
Minseok Kim, Suwon-si, KR;
Junyong Park, Suwon-si, KR;
Suyong Kim, Suwon-si, KR;
Ilhan Park, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A non-volatile memory device includes a plurality of cell strings in a vertical direction, each of the plurality of cell strings including a plurality of memory cells respectively connected to a plurality of word lines, and an erase control transistor having a first end connected to at least one of both ends of plurality of memory cells and a second end connected to at least one of both ends of each of the plurality of cell strings, and a row decoder configured to apply a first bias voltage to the plurality of word lines in a first period in which an erase voltage applied to the second end of the erase control transistor increases to a target level and to apply a second bias voltage higher than the first bias voltage to at least some of the plurality of word lines in a second period after the first period.