The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Mar. 28, 2024
Sandisk Technologies, Inc., Milpitas, CA (US);
Anirudh Amarnath, Fremont, CA (US);
Adit Pendam, Sunnyvale, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Technology for compact data latches. Two global driver transistors are each connected to a large number of compact data latches. The global driver transistors may be operated during a simultaneous latch operation in each of the compact data latches. A latch operation may discharge a high voltage from a latch output, depending on whether that output is to go from the high voltage to a low voltage. Such discharge could lead to a shoot through voltage and/or fight between a PMOS and an NMOS transistor in the data latch. Turning off one of the global driver transistors during a latch operation prevents shoot through current and also prevents a fight between a PMOS and an NMOS transistor in the data latch. The global driver transistors occupy a small chip area.