The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Nov. 29, 2019
Applicant:
The Research Foundation for the State University of New York, Albany, NY (US);
Inventors:
Matthew Eisaman, Port Jefferson, NY (US);
Jan Folkson, Williston Park, NY (US);
Joseph Andrade, Stony Brook, NY (US);
Assignee:
The Research Foundation for The State University of New York, Albany, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); C23C 16/01 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01);
U.S. Cl.
CPC ...
C23C 16/26 (2013.01); C23C 16/01 (2013.01); C23C 16/02 (2013.01);
Abstract
Provided are methods for producing n-doped graphene films. The method comprises contacting a graphene layer with an alkali metal-doped polymer layer. Compositions comprising (i) a substrate, (ii) a doped polymer, and (iii) graphene are also provided. The methods of the invention produce n-doped graphene films that are resistant to degradation, have high electrical conductivity, and low sheet resistance without altering the optical transmission of graphene.